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DMN2215UDM DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features * * Dual N-Channel MOSFET Low On-Resistance * 100m @VGS = 4.5V, ID = 2.5A * 140m @VGS = 2.5V, ID = 1.5A * 215m @VGS = 1.8V, ID = 1A Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate to 2kV HBM Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * * * * Case: SOT-26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.015 grams (approximate) NEW PRODUCT * * * * * * * G1 SOT-26 D1 S2 S1 G2 ESD PROTECTED TO 2kV D2 TOP VIEW TOP VIEW Schematic and Pin Configuration Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 85C ID IDM Value 20 12 2.0 1.4 7.0 Units V V A A Characteristic Pulsed Drain Current ( Note 4) Thermal Characteristics @TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 650 192 -55 to +150 Units mW C/W C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, or minimum recommended pad layout 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Pulse width 10s, duty cycle 1%. DMN2215UDM Document number: DS31176 Rev. 4 - 2 1 of 4 www.diodes.com June 2008 (c) Diodes Incorporated DMN2215UDM Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 5. Short duration pulse test used to minimize self-heating effect. @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS Min 20 0.6 Typ 80 105 165 5 0.73 188 44 30 8 3.8 19.6 8.3 Max 1 10 1.0 100 140 215 1.1 Unit V A A V m S V pF pF pF Test Condition VGS = 0V, ID = 10A VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VDS = VCS, ID = 250A VGS = 4.5V, ID = 2.5A VGS = 2.5V, ID = 1.5A VGS = 1.8V, ID = 1.0A VDS =5V, ID = 2.4A VGS = 0V, IS = 1.05A VDS = 10V, VGS = 0V f = 1.0MHz NEW PRODUCT VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss td(on) tr td(off) tt ns VDD = 10V, RL = 10 ID = 1A, VGEN = 4.5V, RG = 6 10 8 7 8 6 6 5 4 4 3 2 2 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 DMN2215UDM Document number: DS31176 Rev. 4 - 2 2 of 4 www.diodes.com June 2008 (c) Diodes Incorporated DMN2215UDM 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 1.8 VGS = 2.5V ID = 1.5A 1.6 RDS(ON) NORMALIZED VGS = 4.5V ID = 2.5A 1.4 VGS = 1.8V NEW PRODUCT 0.1 VGS = 2.5V VGS = 4.5V 1.2 VGS = 1.8V ID = 1.0A 1 0.8 0.01 0.01 0.1 1 ID, DRAIN-SOURCE CURRENT Fig. 3 On-Resistance vs. Drain-Source Current & Gate Voltage 10 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 4 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature 1 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1,000 f = 1MHz 0.6 C, TOTAL CAPACITANCE (pF) 0.8 ID = 250A Ciss 100 0.4 Coss Crss 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation with Temperature 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 20 10 IS, SOURCE CURRENT (A) 1 0.1 0.01 0.001 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage DMN2215UDM Document number: DS31176 Rev. 4 - 2 3 of 4 www.diodes.com June 2008 (c) Diodes Incorporated DMN2215UDM Ordering Information Part Number DMN2215UDM-7 Notes: (Note 6) Case SOT-26 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information 22N = Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 22N Date Code Key Year Code Month Code 2007 U Jan 1 Feb 2 2008 V Mar 3 2009 W Apr 4 2010 X May 5 Jun 6 YM 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 Oct O 2014 B Nov N 2015 C Dec D Package Outline Dimensions A BC H K M J D L SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0 8 All Dimensions in mm Suggested Pad Layout E E Z G C Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C 2.40 E 0.95 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2215UDM Document number: DS31176 Rev. 4 - 2 4 of 4 www.diodes.com June 2008 (c) Diodes Incorporated |
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